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Sense amplifier comprising field effect transistor with short channel length and adjustable threshold voltage
Sense amplifier comprising field effect transistor with short channel length and adjustable threshold voltage
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机译：感测放大器，包括具有短沟道长度和可调阈值电压的场效应晶体管
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摘要
The field effect transistor (10) is located in a trough (9) formed by an n+ type conduction buried layer (5) and n-type conduction diffusion regions (7,8). The gate to source voltage (Vth) can be controlled by adjusting the negative trough potential (VBS)
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