PHASE MODULATOR AND INTERFEROMETER BASED ON ELECTRO-OPTIC EFFECTS IN ASSYMETRICALLY STRAINED GROUP-IV MATERIAL

摘要

The invention relates to a phase modulator based on a permanently asymmetrically strained crystalline group-IV material, such as silicon (Si), germanium (Ge) or a compound hereof (SiGe). The modulator comprises a waveguide with a core incorporating a group-IV region, and a material layer inducing a strain in the group-IV region. Application of an electrical bias over the strained region changes the index of refraction in this region. By transmitting light in the waveguide structure while modulating the electrical field across the strained region, the phase of the transmitted light is modulated accordingly. The invention also relates to an interferometer based on the phase modulator.