IMPROVED DUAL DAMASCENE INTEGRATION STRUCTURES AND METHOD OF FORMING IMPROVED DUAL DAMASCENE INTEGRATION STRUCTURES

摘要

Methods for forming a dual damascene dielectric structure in a porous ultra-low-k (ULK) dielectric material (504) by using gas- cluster ion-beam processing are disclosed. These methods minimize hard-mask layers during dual damascene ULK processing and eliminate hard-masks in the final ULK dual damascene structure. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel UL dual damascene structure (512) is disclosed with densified interfaces and no hard-masks.