EPITAXIAL SILICON GERMANIUM FOR REDUCED CONTACT RESISTANCE IN FIELD-EFFECT TRANSISTORS

摘要

A method for selectively relieving channel stress for n-channel transistors with recessed, epitaxial SiGe source and drain regions is described. This increases the electron mobility for the n-channel transistors without affecting the strain in p-channel transistors. The SiGe provides lower resistance when a silicide is formed.