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Light scattering layer for electronic device comprising nano-particles, stacked structure comprising light scattering layer for thin film transistor, and methods of forming the same
Light scattering layer for electronic device comprising nano-particles, stacked structure comprising light scattering layer for thin film transistor, and methods of forming the same
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机译:用于包含纳米粒子的电子设备的光散射层,包括用于薄膜晶体管的光散射层的堆叠结构及其形成方法
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摘要
A light scattering layer for an electronic device comprising nano-particles, a junction structure for a thin film transistor comprising the light scattering layer, and methods of forming the same are provided. The light scattering layer for the electronic device comprises a carbide-semimetal or a carbide-metal comprising nano-particles comprising Si or a metal. In the junction structure for a thin film transistor according to an embodiment of the present invention, the light scattering layer is interposed between a first protective layer and a second protective layer comprising (ZnS)1-x(SiC)x, W1-xCx, Ta1-xCx, and Mo1-xCx, wherein 0 x 1. First and second capping layers comprising M1-y((ZnS)1-x(SiC)x)y, M1-y(W1-xCx)y, M1-y(Ta1-xCx)y, and M1-y(Mo1-xCx)y, wherein 0 x 1, 0 y 1, and M is Si, Ta, W or Mo, may be interposed between the first protective layer and the light scattering layer, and between the light scattering layer and the second protective layer, respectively. The layers are sequentially formed in-situ, without breaking a vacuum state after the process of forming each layer is performed.
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机译:提供了一种用于电子设备的包括纳米粒子的光散射层,用于包括该光散射层的薄膜晶体管的结结构及其形成方法。用于电子设备的光散射层包括碳化物半金属或碳化物金属,所述碳化物半金属或碳化物金属包括包含Si或金属的纳米粒子。在根据本发明实施例的用于薄膜晶体管的结结构中,光散射层介于包括(ZnS)1-x(SiC)x,W 1-x C x的第一保护层和第二保护层之间。 Ta1-xCx和Mo1-xCx,其中0 展开▼