首页> 外国专利> LARGE SCALE ONE-POT SYNTHESIS OF SEMICONDUCTOR QUANTUM DOTS

LARGE SCALE ONE-POT SYNTHESIS OF SEMICONDUCTOR QUANTUM DOTS

机译:半导体量子点的大规模一锅法合成

摘要

The present invention relates to a process capable of synthesizing the semiconductor quantum dots having a central light component prosecution / shell structure in large quantities in a short time. With the quantum dot synthesis method according to the invention it can be synthesized in a large amount economically quantum dot within a short time without the risk of explosion. In addition, this luminescent semiconductor quantum dots with the same synthesis method can be applied to various areas of the illuminant used since it is possible to emit light at various wavelengths around the visible light is high efficiency of light emission region. In addition, the excellent stability as photochemical, physical light may be applied to the light emitting element, single-electron transistor, a solar cell sensitizer, and labeling bio-tag (tag biolabelling). ; Semiconductor quantum dot, the precursor II-group metal, Group VI chalcogenide precursor, cross-injected continuous growth method
机译:本发明涉及一种能够在短时间内大量合成具有中心光成分起诉/壳结构的半导体量子点的方法。利用根据本发明的量子点合成方法,可以在短时间内大量经济地合成量子点而没有爆炸的风险。另外,由于可以在可见光周围高效率地发射可见光周围发射各种波长的光,因此可以以相同的合成方法将该发光半导体量子点应用于所使用的发光体的各个区域。另外,作为光化学,物理光的优异稳定性可以应用于发光元件,单电子晶体管,太阳能电池敏化剂和标记生物标签(标签生物标签)。 ;半导体量子点,II族金属前体,VI族硫族化物前体,交叉注入连续生长法

著录项

  • 公开/公告号KR100657639B1

    专利类型

  • 公开/公告日2006-12-14

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20050094417

  • 发明设计人 김재일;이진규;

    申请日2005-10-07

  • 分类号H01L21/20;

  • 国家 KR

  • 入库时间 2022-08-21 20:39:45

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