the present invention is a polymer thin film formed in the voluntary Ni 1-x Fe x (0 & x & 0.5) nanocrystals the present invention relates to a flash memory device of high efficiency at low cost with a nano floating gate using a Ni 1-x Fe x According to the method for producing a nano floating gate having a nano- crystal Ni 1-x Fe x is the control of the size and density of the nano- crystals and nano easily therethrough it is possible to improve the performance of the floating gate . And electrically , by using a chemically stable highly efficient , low-cost nano floating gate of a floating gate memory device and the nano has the effect of providing a method of manufacturing the same .
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机译：本发明是一种在自发的Ni 1-x Fe x （0＆ x＆ 0.5）纳米晶体中形成的聚合物薄膜。根据使用具有纳米结构的纳米浮栅的方法，使用Ni 1-x Fe x 的具有纳米浮栅的低成本高效率的闪存器件。 Ni 1-x Fe x 晶体是纳米晶体的尺寸和密度的控制，通过它可以很容易地控制纳米晶体，从而可以改善浮栅的性能。并且在电学上，通过使用浮栅存储器件的化学稳定的高效，低成本纳米浮栅和纳米具有提供制造该方法的效果。
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