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FORMATION OF A SILICON OXYNITRIDE LAYER ON A HIGH-K DIELECTRIC MATERIAL
FORMATION OF A SILICON OXYNITRIDE LAYER ON A HIGH-K DIELECTRIC MATERIAL
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机译:高K介电材料上硅氧化层的形成
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摘要
Embodiments of the invention provide methods for depositing a capping layer on a dielectric layer disposed on a substrate. In one example, a process includes exposing a substrate to a deposition process to form a dielectric layer thereon, exposing the substrate to sequential pulses of a silicon precursor and an oxidizing gas to form a silicon-containing layer on the dielectric layer during a deposition process, exposing the substrate to a nitridation process to form a capping layer thereon and exposing the substrate to an annealing process for a predetermined time. The capping layer may a thickness of about 5 A(A:latin capital letter A with ring above) or less. In one example, the oxidizing gas contains water vapor derived from a hydrogen source gas and an oxygen source gas processed by a water vapor generator containing a catalyst. In another example, the deposition, nitridation and annealing processes occur in the same process chamber. ® KIPO & WIPO 2007
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