FORMATION METHODS OF InGaN NITRIDE LAYER AND MULTI-QUANTUM WELL STRUCTURE ACTIVE LAYER

摘要

The present invention relates to a method for growing InGaN nitride layer including an active layer of multiple quantum well structure , In _x Ga _{1 -x} N (0 & x 1) in the step of growing a gallium nitride layer a constant amount of the source and the indium source maintain , and provides dimethyl hydrazine (DMHy) InGaN nitride layer forming method , characterized by controlling the amount of indium in the nitride layer by adjusting the feed rate of the gas as the nitrogen source .