首页> 外国专利> METHOD FOR THE CATASTROPHIC TRANSFER OF A THIN LAYER AFTER CO-IMPLANTATION

METHOD FOR THE CATASTROPHIC TRANSFER OF A THIN LAYER AFTER CO-IMPLANTATION

机译:共植入后薄层的静力学传递方法

摘要

The catastrophic transfer of a thin film comprises: (a) preparing a source substrate; (b) implanting a first species of ions or gas, in a first dose to a given depth, and a second species of ions or gas in a second dose, the first species being able to generate defects and the second species being able to occupy these defects; (c) applying a stiffener in intimate contact with the source substrate; (d) heat treating the source substrate to a given temperature for a given time, to create a buried fragile zone without initiating the thermal detachment of the thin film; and (e) applying a localized energy contribution to provoke the catastrophic detachment of the thin film delimited between the surface and the buried fragile layer, this thin film having a surface with a rugosity below a given threshold.
机译:薄膜的灾难性转移包括:(a)准备源基板; (b)以第一剂量向给定深度注入第一种类的离子或气体,并以第二剂量注入第二种类的离子或气体,第一种类能够产生缺陷,第二种类能够占据这些缺陷; (c)施加与源基板紧密接触的加强筋; (d)在给定的时间内将源衬底热处理到给定的温度,以产生掩埋的易碎区域,而不会引起薄膜的热分离; (e)施加局部能量贡献以引起限定在表面和掩埋的易碎层之间的薄膜的灾难性分离,该薄膜具有表面的皱纹度低于给定阈值。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号