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SEMICONDUCTOR MEMORY DEVICE INCLUDING POST PACKAGE REPAIR CIRCUIT AND METHOD OF POST PACKAGE REPAIR
SEMICONDUCTOR MEMORY DEVICE INCLUDING POST PACKAGE REPAIR CIRCUIT AND METHOD OF POST PACKAGE REPAIR
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机译:包括后封装修复电路的半导体存储器和后封装修复方法
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摘要
A semiconductor memory device comprising a post package repair circuit and a post package repair method are provided to perform a repair operation only on a weak cell by preventing repair of normal cells caused when a top array mat and a bottom array mat of one bank are enabled at the same time in order to repair the weak cell. In a semiconductor memory, a plurality of banks includes normal cells and redundancy cells and comprises a plurality of array mats. A repair circuit repairs a weak cell with a redundancy cell corresponding to the weak cell when the weak cell is detected among the normal cells. The repair circuit controls the array mats comprised in one bank differently.
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