首页> 外国专利> SEMICONDUCTOR MEMORY DEVICE INCLUDING POST PACKAGE REPAIR CIRCUIT AND METHOD OF POST PACKAGE REPAIR

SEMICONDUCTOR MEMORY DEVICE INCLUDING POST PACKAGE REPAIR CIRCUIT AND METHOD OF POST PACKAGE REPAIR

机译:包括后封装修复电路的半导体存储器和后封装修复方法

摘要

A semiconductor memory device comprising a post package repair circuit and a post package repair method are provided to perform a repair operation only on a weak cell by preventing repair of normal cells caused when a top array mat and a bottom array mat of one bank are enabled at the same time in order to repair the weak cell. In a semiconductor memory, a plurality of banks includes normal cells and redundancy cells and comprises a plurality of array mats. A repair circuit repairs a weak cell with a redundancy cell corresponding to the weak cell when the weak cell is detected among the normal cells. The repair circuit controls the array mats comprised in one bank differently.
机译:提供一种包括后封装修复电路的半导体存储器件和后封装修复方法,以通过防止启用一个存储体的顶部阵列垫和底部阵列垫时引起的正常单元的修复,仅对弱单元执行修复操作。同时为了修复弱小的细胞。在半导体存储器中,多个存储体包括普通单元和冗余单元,并且包括多个阵列垫。当在正常单元中检测到弱单元时,修复电路用与该弱单元相对应的冗余单元修复该弱单元。修复电路以不同方式控制包含在一组中的阵列垫。

著录项

  • 公开/公告号KR20070082815A

    专利类型

  • 公开/公告日2007-08-22

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20060015909

  • 发明设计人 CHOI SUNG HO;CHUN BYUNG KWAN;

    申请日2006-02-18

  • 分类号G11C29/24;

  • 国家 KR

  • 入库时间 2022-08-21 20:33:45

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