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A FIELD EFFECT TRANSISTOR COMPRISING A GOLD LAYER, A MICROFLUIDIC DEVICE COMPRISING THE FIELD EFFECT TRANSISTOR AND A METHOD OF DETECTING AN ANALYTE HAVING A THIOL GROUP USING THE FIELD EFFECT TRANSISTOR AND MICROFLUIDIC DEVICE
A FIELD EFFECT TRANSISTOR COMPRISING A GOLD LAYER, A MICROFLUIDIC DEVICE COMPRISING THE FIELD EFFECT TRANSISTOR AND A METHOD OF DETECTING AN ANALYTE HAVING A THIOL GROUP USING THE FIELD EFFECT TRANSISTOR AND MICROFLUIDIC DEVICE
A field effect transistor including a gold layer, a micro-fluidic device having the field effect transistor, and a method of detecting an assay having a thiol group using the field effect transistor and the micro-fluidic device are provided to detect the assay in a sample by measuring electric signals such as current or voltage. A field effect transistor including a gold layer includes a substrate, a source area, a drain area, a channel area, an insulating layer, a gold layer, and a gate electrode. The substrate is made of a semiconductor material. The source and drain areas are formed inside the substrate by being separated from each other, and are doped with the opposite polarity to the substrate. The channel area is arranged between the source and drain areas. The insulating layer is arranged on the channel area. The gold layer is located on the insulating layer. The gate electrode is arranged on the insulating layer.
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