首页> 外国专利> A FIELD EFFECT TRANSISTOR COMPRISING A GOLD LAYER, A MICROFLUIDIC DEVICE COMPRISING THE FIELD EFFECT TRANSISTOR AND A METHOD OF DETECTING AN ANALYTE HAVING A THIOL GROUP USING THE FIELD EFFECT TRANSISTOR AND MICROFLUIDIC DEVICE

A FIELD EFFECT TRANSISTOR COMPRISING A GOLD LAYER, A MICROFLUIDIC DEVICE COMPRISING THE FIELD EFFECT TRANSISTOR AND A METHOD OF DETECTING AN ANALYTE HAVING A THIOL GROUP USING THE FIELD EFFECT TRANSISTOR AND MICROFLUIDIC DEVICE

机译:包括金层的场效应晶体管,包括场效应晶体管的微流体装置以及使用场效应晶体管和微流体装置检测具有硫醇基的分析物的方法

摘要

A field effect transistor including a gold layer, a micro-fluidic device having the field effect transistor, and a method of detecting an assay having a thiol group using the field effect transistor and the micro-fluidic device are provided to detect the assay in a sample by measuring electric signals such as current or voltage. A field effect transistor including a gold layer includes a substrate, a source area, a drain area, a channel area, an insulating layer, a gold layer, and a gate electrode. The substrate is made of a semiconductor material. The source and drain areas are formed inside the substrate by being separated from each other, and are doped with the opposite polarity to the substrate. The channel area is arranged between the source and drain areas. The insulating layer is arranged on the channel area. The gold layer is located on the insulating layer. The gate electrode is arranged on the insulating layer.
机译:提供了一种包括金层的场效应晶体管,具有该场效应晶体管的微流体装置,以及使用该场效应晶体管和该微流体装置来检测具有硫醇基的分析物的方法,以检测在半导体层中的分析物。通过测量电信号(例如电流或电压)来采样。包括金层的场效应晶体管包括衬底,源极区,漏极区,沟道区,绝缘层,金层和栅电极。基板由半导体材料制成。源极区和漏极区通过彼此分离而形成在基板内部,并且以与基板相反的极性掺杂。沟道区布置在源极区和漏极区之间。绝缘层布置在沟道区域上。金层位于绝缘层上。栅电极布置在绝缘层上。

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