首页> 外国专利> NAND FLASH MEMORY DEVICE PERFORMING ERROR DETECTION AND DATA RELOADING OPERATION DURING COPY BACK PROGRAM OPERATION

NAND FLASH MEMORY DEVICE PERFORMING ERROR DETECTION AND DATA RELOADING OPERATION DURING COPY BACK PROGRAM OPERATION

机译:NAND Flash存储设备在复制程序运行期间执行错误检测和数据重新加载操作

摘要

A NAND flash memory device is provided to perform error detection and data reloading processes during a copy back program process by selecting a bit error while data is read from a source page. A NAND flash memory device includes a cell array(110), a parity cell array(210), and a parity generating and parity column selecting circuit(230). The cell array is divided into plural planes. The parity cell array is divided into plural parity planes, which store parities for the respective planes. The parity generating and parity column selecting circuit generates a new parity for a reloaded data from the outside during a copy back program process and stores the new parity on a parity plane, which corresponds to a plane, on which the reloaded data is stored.
机译:提供一种NAND闪存设备,以通过在从源页面读取数据时选择位错误来在回写编程过程中执行错误检测和数据重新加载过程。一种NAND闪存设备,包括单元阵列(110),奇偶校验单元阵列(210)以及奇偶校验产生和奇偶校验列选择电路(230)。单元阵列被分成多个平面。奇偶校验单元阵列被划分为多个奇偶校验平面,其存储各个平面的奇偶校验。奇偶校验生成和奇偶校验列选择电路在回写编程过程期间从外部为重载的数据生成新的奇偶校验,并将新的奇偶校验存储在奇偶校验平面上,该奇偶校验平面对应于存储重载数据的平面。

著录项

  • 公开/公告号KR100669352B1

    专利类型

  • 公开/公告日2007-01-16

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20050083216

  • 发明设计人 KIM HYUNG GON;

    申请日2005-09-07

  • 分类号G11C16/02;G11C16/34;

  • 国家 KR

  • 入库时间 2022-08-21 20:33:11

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