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XOR LOGIC CIRCUIT USING MAGNETIC TUNNELING JUNCTION CELL AND METHOD FOR OPERATING THE XOR LOGIC CIRCUIT

机译:利用磁隧道结单元的异或逻辑电路及异或逻辑电路的操作方法

摘要

An XOR logic circuit and a method for operating the XOR logic circuit are provided to enhance remarkably an operation speed and prolong the lifetime by using an MTJ(Magnetic Tunneling Junction) cell. An XOR logic circuit includes an MTJ cell, an MTJ cell driving unit(21) for changing the resistance of the MTJ cell between first and second resistance values, a reference resistor, and a comparing unit for outputting a predetermined logic value by comparing the value of the reference resistor with a resistance value of the MTJ cell. The MTJ cell driving unit consists of an upper electrode, a lower electrode, and first to third input lines. The upper and the lower electrodes(24,22) are arranged at upper and lower portions of the MTJ cell, respectively. The first to the third input lines(25A,25B,25C) cross over the upper electrode. The first to the third input lines are parallel with each other.
机译:提供一种XOR逻辑电路和用于操作该XOR逻辑电路的方法,以通过使用MTJ(磁性隧道结)单元显着提高操作速度并延长寿命。 XOR逻辑电路包括MTJ单元,用于在第一和第二电阻值之间改变MTJ单元的电阻的MTJ单元驱动单元(21),参考电阻器和用于通过比较该值来输出预定逻辑值的比较单元。参考电阻与MTJ单元的电阻值之比。 MTJ单元驱动单元包括上电极,下电极以及第一至第三输入线。上部和下部电极(24,22)分别布置在MTJ单元的上部和下部。第一至第三输入线(25A,25B,25C)与上电极交叉。第一至第三输入线彼此平行。

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