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XOR LOGIC CIRCUIT USING MAGNETIC TUNNELING JUNCTION CELL AND METHOD FOR OPERATING THE XOR LOGIC CIRCUIT
XOR LOGIC CIRCUIT USING MAGNETIC TUNNELING JUNCTION CELL AND METHOD FOR OPERATING THE XOR LOGIC CIRCUIT
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机译:利用磁隧道结单元的异或逻辑电路及异或逻辑电路的操作方法
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摘要
An XOR logic circuit and a method for operating the XOR logic circuit are provided to enhance remarkably an operation speed and prolong the lifetime by using an MTJ(Magnetic Tunneling Junction) cell. An XOR logic circuit includes an MTJ cell, an MTJ cell driving unit(21) for changing the resistance of the MTJ cell between first and second resistance values, a reference resistor, and a comparing unit for outputting a predetermined logic value by comparing the value of the reference resistor with a resistance value of the MTJ cell. The MTJ cell driving unit consists of an upper electrode, a lower electrode, and first to third input lines. The upper and the lower electrodes(24,22) are arranged at upper and lower portions of the MTJ cell, respectively. The first to the third input lines(25A,25B,25C) cross over the upper electrode. The first to the third input lines are parallel with each other.
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