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THE GROWING METHOD OF NEW CUAU PHASE OF I III VI2 SINGLE CRYSTAL THIN FILMS
THE GROWING METHOD OF NEW CUAU PHASE OF I III VI2 SINGLE CRYSTAL THIN FILMS
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机译:I III VI2单晶薄膜新CUAU相的生长方法
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摘要
A growing method of a new CuAu phase of I III VI2 single crystal thin film is provided to utilize a new CuAu phase of AgGaSe2 single crystal thin film as a spin-polarized electron source of an accelerator. A compound including elements of a group I and elements of a group III is used as an evaporation source. The evaporation source is supplied to a substrate. A new CuAu phase of I III VI2 single crystal thin film is grown on the substrate by oversupplying elements of a group VI to the substrate. In the growing method, crystal powders of the I III VI2 compound are used as the evaporation source.
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机译:提供一种III族VI2单晶薄膜的新型CuAu相的生长方法,以利用AgGaSe2单晶薄膜的新型CuAu相作为促进剂的自旋极化电子源。包含I族元素和III族元素的化合物用作蒸发源。蒸发源被供应到基板。通过将VI族的元素过量供应到衬底上,在衬底上生长I III VI2单晶薄膜的新的CuAu相。在生长方法中,将III-VI2化合物的结晶粉末用作蒸发源。
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