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Transistor using property of metal-insulator transforming layer and methods of manufacturing for the same
Transistor using property of metal-insulator transforming layer and methods of manufacturing for the same
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机译:利用金属-绝缘体转换层的特性的晶体管及其制造方法
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摘要
A transistor including a metal-insulation transition material and a method of manufacturing the same. The transistor including a metal-insulator transition material may include a substrate, a insulation layer formed on the substrate, a source region and a drain region separately formed from each other on the insulation layer, a tunneling barrier layer formed on at least one surface of the source region and the drain region, a metal-insulator transition material layer formed on the tunneling barrier layer and the insulation layer, a dielectric layer stacked on the metal-insulator transition material layer, and a gate electrode layer formed on the dielectric layer.
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