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NONVOLATILE CARBON NANOTUBE MEMORY DEVICE USING MULTIWALL CARBON NANOTUBES AND METHOD OF OPERATING THE SAME
NONVOLATILE CARBON NANOTUBE MEMORY DEVICE USING MULTIWALL CARBON NANOTUBES AND METHOD OF OPERATING THE SAME
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机译:使用多壁碳纳米管的非易失性碳纳米管存储器及其操作方法
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摘要
A non-volatile carbon nanotube memory using a multi-wall carbon nanotube is provided to improve an operation speed while decreasing an operation voltage by enabling a memory function only by a little movement of a core of a multi-wall carbon nanotube. A first electrode(32) is formed on a substrate(30). First and second vertical walls(36,38) are formed on the first electrode, separated from each other. A multi-wall carbon nanotube(34) is formed on the first electrode between the first and the second vertical walls. Second and third electrodes(36b,38b) are formed on the first and the second vertical walls, respectively. A fourth electrode is formed over the multi-wall carbon nanotube. Caps(36a,38a) having tilted surfaces are formed on the upper surface of the first and second vertical walls, and the second and third electrodes are formed on the tilted surfaces of the caps confronting each other. An upper substrate(40) is formed over the multi-wall carbon nanotube, and a fourth electrode(42) is formed in the upper substrate.
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