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NONVOLATILE CARBON NANOTUBE MEMORY DEVICE USING MULTIWALL CARBON NANOTUBES AND METHOD OF OPERATING THE SAME

机译:使用多壁碳纳米管的非易失性碳纳米管存储器及其操作方法

摘要

A non-volatile carbon nanotube memory using a multi-wall carbon nanotube is provided to improve an operation speed while decreasing an operation voltage by enabling a memory function only by a little movement of a core of a multi-wall carbon nanotube. A first electrode(32) is formed on a substrate(30). First and second vertical walls(36,38) are formed on the first electrode, separated from each other. A multi-wall carbon nanotube(34) is formed on the first electrode between the first and the second vertical walls. Second and third electrodes(36b,38b) are formed on the first and the second vertical walls, respectively. A fourth electrode is formed over the multi-wall carbon nanotube. Caps(36a,38a) having tilted surfaces are formed on the upper surface of the first and second vertical walls, and the second and third electrodes are formed on the tilted surfaces of the caps confronting each other. An upper substrate(40) is formed over the multi-wall carbon nanotube, and a fourth electrode(42) is formed in the upper substrate.
机译:提供一种使用多壁碳纳米管的非易失性碳纳米管存储器,以通过仅通过多壁碳纳米管的芯的少量移动而实现存储功能来提高操作速度,同时降低操作电压。在基板(30)上形成第一电极(32)。第一和第二垂直壁(36,38)形成在彼此分开的第一电极上。在第一和第二垂直壁之间的第一电极上形成多壁碳纳米管(34)。第二和第三电极(36b,38b)分别形成在第一和第二垂直壁上。在多壁碳纳米管上方形成第四电极。在第一和第二垂直壁的上表面上形成具有倾斜表面的帽(36a,38a),并且在彼此面对的帽的倾斜表面上形成第二和第三电极。在多壁碳纳米管上方形成上基板(40),并且在上基板中形成第四电极(42)。

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