Mask layer pattern for cell halo implantation and method of cell halo implanting using the same

摘要

A mask pattern and a cell halo ion implantation method using the same are provided to prevent the damage of an upper surface of the mask pattern by using a hole type opening portion for exposing a bit line contact region alone to the outside. A cell halo ion implantation mask pattern(250) is used for performing a cell halo ion implantation on a bit line contact region of a semiconductor device. The semiconductor device includes a semiconductor substrate having an active region(220) defined by an isolation layer(210) and a gate stack(240) on the substrate via a gate insulating layer. The cell halo ion implantation mask pattern includes a hole type opening portion for exposing the bit line contact region alone to the outside.