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Semiconductor micro gas sensor by micro-machining technique and method for manufacturing the sensor

机译:通过微加工技术的半导体微气体传感器及其制造方法

摘要

A semiconductor micro gas sensor and a method of manufacturing the same are provided to maximize thermal efficiency of a heater by depositing a gas detection material on a portion of an insulating layer. A semiconductor micro gas sensor includes a first insulating layer(38), a detection electrode(36), a heater electrode(34), a second insulating layer, and a gas detection layer(50). The first insulating layer is formed at both sides of a silicon substrate by depositing an insulating material. The detection electrode is formed of a metal thin layer deposited on the first insulating layer. The heater electrode(34) is deposited on the first insulating layer and partially crosses the detection electrode. The second insulating layer exposes a portion of the detection electrode. The gas detection layer is deposited on the second insulating layer to form prominences and depressions.
机译:提供一种半导体微气体传感器及其制造方法,以通过在绝缘层的一部分上沉积气体检测材料来最大化加热器的热效率。半导体微型气体传感器包括第一绝缘层(38),检测电极(36),加热器电极(34),第二绝缘层和气体检测层(50)。通过沉积绝缘材料在硅衬底的两侧形成第一绝缘层。检测电极由沉积在第一绝缘层上的金属薄层形成。加热器电极(34)沉积在第一绝缘层上并且部分地与检测电极交叉。第二绝缘层暴露检测电极的一部分。气体检测层沉积在第二绝缘层上以形成突起和凹陷。

著录项

  • 公开/公告号KR100710864B1

    专利类型

  • 公开/公告日2007-04-25

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20050031650

  • 申请日2005-04-15

  • 分类号G01N27/14;

  • 国家 KR

  • 入库时间 2022-08-21 20:32:24

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