METHODS OF FORMING A PHASE CHANGE MATERIAL LAYER AND METHOD OF FORMING PHASE CHANGE MEMORY DEVICE USING THE SAME AND PHASE CHANGE MEMORY DEVICE FORMED FROM USING THE SAME

摘要

A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.