LOW TEMPERATURE CVD CHAMBER CLEANING USING DILUTE NF3

摘要

The present invention is required to minimize the susceptor temperature rise Standing thermal budget process, low temperature plasma enhanced chemical deposition (PECVD) is a by-product from the evaporation chamber and related hardware in the system (in-situ) a method of cleaning. In the basic in situ PECVD process, introducing the purge gas for a sufficient time at a temperature sufficient to remove by-products of the deposition film in the chamber and is removed from the PECVD chamber, the cleaning gas containing deposition byproducts after that. A method for minimizing the susceptor temperature rise in a low temperature PECVD chamber in the cleaning process is diluted with helium in an amount sufficient to remove the heat generated during the low temperature plasma enhanced chemical vapor deposition chamber cleaning,, NF _{for cleaning of the chamber practically involves the use of a cleaning gas consisting of 3} The susceptor is maintained at less than 150 .