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METHOD FOR FABRICATING A ZNO BASED LIGHT EMITTING DEVICE AND A ZNO BASED LIGHT EMITTING DEVICE FABRICATED BY THE METHOD
METHOD FOR FABRICATING A ZNO BASED LIGHT EMITTING DEVICE AND A ZNO BASED LIGHT EMITTING DEVICE FABRICATED BY THE METHOD
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机译:制造基于Zno的发光装置的方法以及利用该方法制造的基于Zno的发光装置
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摘要
A method for manufacturing a ZnO based light emitting device and a ZnO based light emitting device manufactured using the same are provided to reduce the lattice unconformity between an AlxInyGa1-x-yN semiconductor layer and a porous silicon substrate by using the porous silicon substrate as a substrate in order to grow the AlxInyGa1-x-yN semiconductor layer. A porous silicon substrate(100) is prepared. A p-type semiconductor layer(400) that is AlxInyGa1-x-yN(0 x,y,x+y 1) compound semiconductor material is formed on the porous silicon substrate. A ZnO(zinc oxide) active layer(500) is formed on the p-type semiconductor layer. An n-type ZnO semiconductor layer(600) is formed on the ZnO active layer. The n-type ZnO semiconductor layer, the ZnO active layer, and a part of the p-type semiconductor layer are etched to expose the part of the p-type semiconductor layer. Electrodes(700,800) are formed on the n-type ZnO semiconductor layer and the exposed p-type semiconductor layer. An AlxInyGa1-x-yN(0 x,y,x+y 1) buffer layer(200) is formed between the porous silicon substrate and the p-type semiconductor layer.
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机译:提供一种用于制造基于ZnO的发光器件的方法和使用该器件制造的基于ZnO的发光器件,以通过使用多孔硅衬底作为衬底来减少AlxInyGa1-x-yN半导体层和多孔硅衬底之间的晶格不整合。为了生长AlxInyGa1-x-yN半导体层而形成的衬底。准备多孔硅基板(100)。在多孔硅基板上形成作为Al x In y Ga 1-x -y N(0 x,y,x + y 1)化合物半导体材料的p型半导体层(400)。在p型半导体层上形成ZnO(氧化锌)活性层(500)。在ZnO活性层上形成n型ZnO半导体层(600)。蚀刻n型ZnO半导体层,ZnO活性层和p型半导体层的一部分以暴露p型半导体层的一部分。在n型ZnO半导体层和暴露的p型半导体层上形成电极(700,800)。在多孔硅基板和p型半导体层之间形成AlxInyGa1-x-yN(0 x,y,x + y 1)缓冲层(200)。
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