METHOD FOR FABRICATING A ZNO BASED LIGHT EMITTING DEVICE AND A ZNO BASED LIGHT EMITTING DEVICE FABRICATED BY THE METHOD

摘要

A method for fabricating a ZnO-based light emitting device and a ZnO-based light emitting device fabricated by the same are provided to form a p-type semiconductor layer by using GaN having properties similar to properties of ZnO. A p-type semiconductor layer including an AlxInyGa1-x-yN(0=x,y,x+y=1) chemical compound semiconductor material is formed(S4). A ZnO-based active layer is formed on an upper surface of the p-type semiconductor layer. An n-type ZnO semiconductor layer is formed on the ZnO-based active layer. A part of the p-type semiconductor layer is exposed by etching partially the n-type ZnO semiconductor layer, the ZnO-based active layer, and the p-type semiconductor layer(S5). Electrodes are formed on the n-type ZnO semiconductor layer and the exposed p-type semiconductor layer(S6).