SPATIALLY CRYSTALLIZATION METHOD OF AMORPHOUS CO2MNSI THIN FILM BY FEMTO-LASER

摘要

A spatial crystallization method of amorphous Co2MnSi thin film by using a femto laser is provided to selectively change the Co2MnSi thin film into a magnetic structure using interference of two beams. Amorphous Co2MnSi thin film is formed in a vacuum chamber at room temperature through a magnetron deposition equipment using a radio frequency. The Co2MnSi thin film is spatially crystallized by using a femto laser. The femto laser includes a wavelength of 800nm, vibration maintaining time of 130fs, a maximum energy of 1mJ, a repetition rate of 1kHz. The spatial crystallization is periodically performed at an interval of 1 micrometer or 3 micrometer.