CHEMICAL MECHANICAL POLISHING PAD, MANUFACTURING PROCESS THEREOF AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR WAFERS

摘要

It has a light transmissive member that is fused to the polishing substrate and the polishing substrate having a polishing surface, and the cross-sectional shape when cut in a plane parallel to the light transmitting member to the polishing surface, which is obtained by dividing the major axis to minor axis greater than 1 the chemical mechanical polishing pad, characterized in that the value of the elliptical shape. The polishing pad is capable of transmitting end-point detection light without reducing the polishing performance in the polishing surface of the semiconductor wafer.