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SEMI-CONDUCTOR ABLE TO MACRO AND MICRO TUNNING OF FREQUENCY AND ANTENNA AND TUNNING CIRCUIT HAVING THE SAME
SEMI-CONDUCTOR ABLE TO MACRO AND MICRO TUNNING OF FREQUENCY AND ANTENNA AND TUNNING CIRCUIT HAVING THE SAME
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机译:可以对频率和天线进行微调和微调的半导体,以及具有相同特性的微调电路
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摘要
A semiconductor device capable of tuning to macro and micro frequencies, an antenna with the same and a frequency tuning circuit are provided to prevent the generation of an insertion loss and to reduce a circuit size by forming a PIN diode and a varactor diode within a predetermined element and forming the predetermined element and an inductor as one piece. First and second semiconductors(31,32) have the same polarities. A third semiconductor(33) is arranged at a portion between the first and second semiconductors. The third semiconductor has a different polarity from those of the first and second semiconductors. A pair of intrinsic semiconductors are arranged at predetermined portions between the third and first semiconductors and between the third and second semiconductors. A first region between the first and third semiconductors and a second region between the second and third semiconductors are used as the pair of intrinsic semiconductors. The first semiconductor, the first region, the third semiconductor are used as a varactor diode. The second semiconductor, the second region, the second semiconductor are used as a PIN diode. The first to third semiconductors include first to third terminals, respectively. An inductor is formed on at least one out of the first to third terminals.
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