首页> 外国专利> SEMI-CONDUCTOR ABLE TO MACRO AND MICRO TUNNING OF FREQUENCY AND ANTENNA AND TUNNING CIRCUIT HAVING THE SAME

SEMI-CONDUCTOR ABLE TO MACRO AND MICRO TUNNING OF FREQUENCY AND ANTENNA AND TUNNING CIRCUIT HAVING THE SAME

机译:可以对频率和天线进行微调和微调的半导体,以及具有相同特性的微调电路

摘要

A semiconductor device capable of tuning to macro and micro frequencies, an antenna with the same and a frequency tuning circuit are provided to prevent the generation of an insertion loss and to reduce a circuit size by forming a PIN diode and a varactor diode within a predetermined element and forming the predetermined element and an inductor as one piece. First and second semiconductors(31,32) have the same polarities. A third semiconductor(33) is arranged at a portion between the first and second semiconductors. The third semiconductor has a different polarity from those of the first and second semiconductors. A pair of intrinsic semiconductors are arranged at predetermined portions between the third and first semiconductors and between the third and second semiconductors. A first region between the first and third semiconductors and a second region between the second and third semiconductors are used as the pair of intrinsic semiconductors. The first semiconductor, the first region, the third semiconductor are used as a varactor diode. The second semiconductor, the second region, the second semiconductor are used as a PIN diode. The first to third semiconductors include first to third terminals, respectively. An inductor is formed on at least one out of the first to third terminals.
机译:提供一种能够调谐到宏和微频率的半导体装置,具有该天线的天线以及频率调谐电路,以通过在预定范围内形成PIN二极管和变容二极管来防止插入损耗的产生并减小电路尺寸。元件,并且将预定元件和电感器形成为一体。第一和第二半导体(31,32)具有相同的极性。第三半导体(33)布置在第一和第二半导体之间的部分。第三半导体具有与第一和第二半导体不同的极性。一对本征半导体布置在第三和第一半导体之间以及第三和第二半导体之间的预定部分。第一和第三半导体之间的第一区域以及第二和第三半导体之间的第二区域用作本征半导体对。第一半导体,第一区域,第三半导体用作变容二极管。第二半导体,第二区域,第二半导体用作PIN二极管。第一至第三半导体分别包括第一至第三端子。在第一至第三端子中的至少一个上形成电感器。

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