METHOD FOR FORMING HfO2 FILM USING Hf Metal Organic Compound

摘要

ALD method by HfO2 film on to in , Hf source as Si atoms are Hf metal -containing organic matter and use . HfO _{using the atomic layer deposition method according to the invention 2} film-forming method comprises the steps of adsorbing to the surface of the semiconductor substrate Hf Hf source is supplied to the semiconductor substrate is loaded into the reactor , the first purge gas for the purging of unreacted Hf source and the reaction by-product supplied to the interior of the reactor , by supplying an oxygen source into the reactor within the reactor the step and the second purge gas is reacted with Hf adsorbed on the surface of the semiconductor substrate supplied by the source , but the unreacted oxygen and purging the reaction by-product as one cycle , repeating the cycle more than once by HfO _{and 2} as to form a film .