Transistor device with mos - structure, in which a change in the output impedance is reduced due to a manufacturing error, a method for their preparation, as well as formed in this way, cmos - circuit

摘要

Mos (metal - oxide - semiconductors) - transistor, to a gate electrode (117), a drain electrode (115) as well as a source electrode (113), wherein the mos - transistor (111) a a - state - resistor r_on when the mos - transistor (111) in a - state is;a resistance electrode (131) the source electrode (113) with a supply voltage section, which a voltage or an energy is fed, andthe resistance electrode (131) a resistor r_gate , the resistance electrode (131) a width ln2 and the gate electrode (117) has a gate length ln1, wherein the following applies:R_on = R_gateandLn2 = ln1.**Known: the term "=" which may be mentioned here are also to be understood as meaning deviations, such as manufacturing tolerances.