首页> 外国专利> Electronic unit e.g. thin-film transistor, manufacturing method, involves pressing semiconducting layer of output structure toward conducting layer of another structure, such that embossed structure cuts off and intercepts conducting layer

Electronic unit e.g. thin-film transistor, manufacturing method, involves pressing semiconducting layer of output structure toward conducting layer of another structure, such that embossed structure cuts off and intercepts conducting layer

机译:电子单元例如薄膜晶体管的制造方法,涉及将输出结构的半导体层压向另一结构的导电层,以使压纹结构切断并截断导电层。

摘要

The method involves providing a multi-layer level output structure with an electrically conducting layer (3) arranged on a substrate (2), an embossing layer (4) made of electrically isolating material with an embossed structure and an electrically semiconducting layer arranged on the embossing layer and embossed structure. The semiconducting layer is pressed toward another electrically conducting layer of another level output structure, such that the embossed structure coated with electrically semiconducting material cuts off and intercepts the latter conducting layer in sections. An independent claim is also included for a multilayer level output structure utilized in a method of manufacturing an electronic unit.
机译:该方法包括提供具有设置在基板(2)上的导电层(3),由具有压纹结构的电绝缘材料制成的压纹层(4)和设置在基板上的半导电层的多层级输出结构。压纹层和压纹结构。将半导体层压向另一级输出结构的另一导电层,以使得涂覆有半导体材料的压纹结构被切掉并截断该导电层的部分。对于在电子单元的制造方法中使用的多层级输出结构,也包括独立权利要求。

著录项

  • 公开/公告号DE102005022000A1

    专利类型

  • 公开/公告日2006-11-16

    原文格式PDF

  • 申请/专利权人 O-FLEX TECHNOLOGIES GMBH;

    申请/专利号DE20051022000

  • 发明设计人 BISGES MICHAEL;

    申请日2005-05-09

  • 分类号H01L51/40;H01G4/33;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:59

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