Thin layer solar cell comprises glass substrate, nucleation layer, p- and n-type gallium arsenide and passivation layer, selectively modified by laser-induced crystallization

摘要

Glass substrate (11) includes a nucleation or seed layer (12) made from an amorphous material by laser-induced crystallization. Gallium arsenide layers (13, 14) are then deposited epitaxially, with opposite (p-type and n-type or vice versa) dopants. They are added as amorphous or nano-crystalline layers. Following deposition, they are laser-pulse irradiated, to melt the gallium arsenide, followed by cooling and crystallization. A passivation layer (15) is epitaxially deposited onto the gallium arsenide layer system (13,14). An independent claim IS INCLUDED FOR the corresponding thin layer solar cell.