Manufacturing method and arrangement with a power semiconductor device and a housing

摘要

The invention describes an arrangement with at least one power semiconductor component and an electrically insulating housing as well as with connecting elements leading to the outside and with a substrate at least partially enclosed by the housing. The power semiconductor component has on its first main surface facing away from the substrate at least one contact surface with a metallization layer made of a noble metal. The shaped metal body likewise has a noble metal layer on its second main surface facing the power semiconductor component. These are connected to one another by means of a pressure sintered connection. DOLLAR A The associated manufacturing process is characterized by the essential step that the metal moldings are arranged on the power semiconductor components in the wafer assembly and a plurality of these arrangements are pressurized simultaneously and thus the pressure sintered connection is produced simultaneously for several of these arrangements.