Method of producing widened n-doped channel connection zones in a field effect semiconductor component and memory element use ion irradiation and then thermal treatment to form secondary defects

摘要

Forming widened n-doped channel connection zones (2) in a field effect-controlled semiconductor component comprises forming a p-doped region (8) with a p-doped channel (7) between it and an n-doped surface layer, irradiating channel connection zone regions with non-electron-donating light ions to form a grid of primary defects and warming to generate electron-donating secondary defects and form the n-doped zone widening. An independent claim is also included for a method of forming a memory element as above.