Opto-electronic semiconductor body for radiation generation, has p-coating layer with two sub areas comprising magnesium and zinc respectively, whose concentration changes with distance of active zone arranged between wave guide layers

摘要

The semiconductor body has an epitaxial semiconductor layer sequence with an active zone (1) arranged between wave guide layers (2) suitable for producing electromagnetic radiation and a p-coating layer (4). The layer (4) has two sub areas (5, 6) comprising magnesium and zinc as p-doping materials (8, 9), respectively, whose concentration changes with a distance of the active zone. The areas (5, 6) are free from zinc and magnesium, respectively. The layer (4) has another sub area, which comprises the doping materials.