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Opto-electronic semiconductor body for use in opto-electronic component, has active zone generating electromagnetic radiation that is emitted transverse to growth direction of semiconductor layer sequence
Opto-electronic semiconductor body for use in opto-electronic component, has active zone generating electromagnetic radiation that is emitted transverse to growth direction of semiconductor layer sequence
The body (100) has two carriers (1, 2), and a semiconductor layer sequence (3) between the two carriers. An active zone (4) generates electromagnetic radiation that is emitted transverse to a growth direction (7) of a semiconductor layer sequence from an edge of the body during operation of the body. The carriers are formed by a galvanic layer. The semiconductor layer sequence is based on arsenide compound semiconductor material, phosphide compound semiconductor material and nitride compound semiconductor material.
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