Batch - trapping - component and method for producing a charge - trapping - component

摘要

A charge - trapping - component comprises a field effect transistor, the source - and has drain regions. The source - and drain regions comprise a dopant concentration profile, a gradient in each case in a vertical and a lateral direction with respect to a surface of a semiconductor substrate having. The gradient in the lateral direction in the direction of a depletion zone of the transistor is larger than the gradient in the vertical direction in the direction of a well regions.