A method for the production of charge trapping ends half conductor memory components and charge trapping end semiconductor memory device

摘要

A method for the production of half conductor memory components, in thea gate oxide (4) on a surface of a semiconductor body (3) is formed,a sige - layer (30) on the gate oxide (4) is applied,a gate - electrode layer (5) and a word line layer (6) on the sige - layer (30) are applied,the word line layer (6), the gate - electrode layer (5) and the sige - layer (30) are structured to word line stacks,Residual portions of the sige - layer (30) selectively to the gate oxide (4) and to the gate - electrode layer (5) are etched, so that on both sides of the word line stacks recesses under the gate - electrode layer (5) within the sige - layer (30) are formed,an oxide layer (11) on surfaces of the semiconductor body (3), remaining portions of the sige - layer (30) and the gate - electrode layer (5) is formed,a dielectric material of a charge trapping ends storage layer (12) is applied andthis material down to residual components, of the strip-like storage layers (12) under lower edges of the gate - electrode layer (5) form, is removed.