首页> 外国专利> Trench wall surface`s surface area determining method for producing trench capacitor of memory cell, involves wetting surface of conductive layer of wall with aqueous conductive liquid, where electrodes are positioned in conductive liquid

Trench wall surface`s surface area determining method for producing trench capacitor of memory cell, involves wetting surface of conductive layer of wall with aqueous conductive liquid, where electrodes are positioned in conductive liquid

机译:用于制造存储单元的沟槽电容器的沟槽壁表面的表面积确定方法,涉及用水性导电液体润湿壁的导电层表面,其中将电极放置在导电液体中

摘要

The method involves wetting a surface (21) of a conductive layer (1) of a wall (31) with an aqueous conductive liquid (6). An electrode (7) is attached to a substrate (2). Electrodes (8, 9) are positioned in the aqueous conductive liquid, where the electrode (9) has a high internal resistance. A voltage is applied between the electrode (7) and the electrode (8). Another voltage applied between the electrode (7) and the electrode (9) is simultaneously measured.
机译:该方法包括用水性导电液体(6)润湿壁(31)的导电层(1)的表面(21)。电极(7)附着于基板(2)。电极(8、9)位于水性导电液体中,其中电极(9)具有高的内部电阻。在电极(7)和电极(8)之间施加电压。同时测量在电极(7)和电极(9)之间施加的另一电压。

著录项

  • 公开/公告号DE102006019902A1

    专利类型

  • 公开/公告日2007-11-08

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20061019902

  • 发明设计人 BLOESS HARALD;

    申请日2006-04-28

  • 分类号H01L21/66;H01L21/762;H01L21/8242;G01B7/32;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:17

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