N-channel transistor, has canal area defining channel longitudinal direction, where canal area has crystalline silicon material with traction deformation component that is aligned along channel longitudinal direction

摘要

The transistor has a canal area (103) defining a channel longitudinal direction, where the canal area has a crystalline silicon material with a traction deformation component. The component is aligned along the direction, where the direction is essentially oriented along a crystallographic direction. The silicon material has a compressive deformation that acts along a channel width direction. Drain and source areas (107) are formed adjacent to a channel area, where the drain and the source areas have a deformed semiconductor material e.g. silicon/carbon material. An independent claim is also included for a method of manufacturing an electronic device.