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Housed semiconductor circuit arrangement e.g. power semiconductor module, has two conductive layers with contact device to joint surface of semiconductor component, where part of conductive layers is part of another contact device
Housed semiconductor circuit arrangement e.g. power semiconductor module, has two conductive layers with contact device to joint surface of semiconductor component, where part of conductive layers is part of another contact device
The arrangement has a substrate with conductive paths, and two conductive layers (60, 64) structured to form the conductive paths. The layers comprise a contact device to a joint surface of a semiconductor component (58) e.g. power diode, and a part of the conductive layers is a part of another contact device (4). The latter contact device comprises a spring unit with a support (30) in a housing (3) and a locking screw. The spring unit comprises a contact surface (402) for an external supply and another contact surface (606) for the layers.
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