Phase change random access memory device, has word line driver including precharge device and discharge device, where precharge device and discharge device are alternately located between set of memory cell blocks

摘要

The device has a set of memory cell blocks sharing a word line. A set of word line drivers drives the word line. Each word line driver includes a precharge device to precharge the word line and a discharge device to discharge the word line. The precharge device and the discharge device are alternately located between the set of memory cell blocks. A set of global bit lines is provided, where a set of local bit lines is connected to the set of global bit lines, respectively.