Non-volatile memory cell, e.g. for smart cards and mobile phones, has spacings between cell gate structure and selection lines made less than width of selection lines

摘要

A non-volatile memory cell has a source region (CSL0 and a drain zone (36b) formed in a substrate (1), a source-selection line (SSL), a drain-selection line (DSL), a cell gate structure, and floating impurity zones (29f, 29f'). The spacings between the cell gate structure on one side and one of the selection lines on the other side is less than the widths of the selection lines. An independent claim is included for the production of the above non-volatile memory cell.