Production process for a zinc oxide crystal or zinc oxide-based semiconductor crystal for light devices reacts zinc and oxygen on a substrate zinc polarity plane and grows the crystal

摘要

Production of a zinc oxide crystal or zinc oxide-based compound semiconductor crystal comprises reacting zinc and oxygen on a zinc polarity plane (+c-plane) and growing the crystal on this. The zinc oxide crystal and the zinc oxide-based compound semiconductor crystal ate grown under zinc-rich conditions. An independent claim is also included for a method as above in which both n- and p-type zinc oxide and zinc magnesium oxide layers and zinc oxide-zinc magnesium oxide quantum well layers are formed.