Semiconductor component e.g. static random access memory, manufacturing method, involves forming set of ditches by selective etching of insulating layer using set of photoresist structures, and forming metallic connection in each ditch

摘要

The method involves preparing a substrate that contains a set of conductive structures, and forming an insulating layer on the substrate. A set of ditches is formed by selective etching of the insulating layer using a set of photoresist structures as an etching mask. The insulating layer is arranged between the formed ditches. A metallic connection in each ditch is formed, where a width of the insulating layer is provided in a range from 0.185 micrometer to 0.225 micrometer.