Integrated semiconductor fuse component for e.g. programmable read only memory, has conducting layer formed on polysilicon layer with small thickness in part of its extension on connection path than in another part of its extension on path

摘要

The component has a polysilicon layer (22) with an anode (24), a cathode (23), and a fuse connecting path. A conducting layer (21) formed on the polysilicon layer has a small thickness in a part of its extension on the fuse connection path than in another part of its extension on the fuse connecting path, where the conducting layer is a metal silicide layer. The path has a doped polysilicon area (26) arranged adjacent to the anode and the cathode, and another doped polysilicon area (27) arranged in a middle area of the fuse connecting path between the anode and the cathode. An independent claim is also included for a procedure for producing an integrated semiconductor fuse component.