首页> 外国专利> Fuse structure programming, as well as electromigration failures of silicide improved by providing a temperature gradient

Fuse structure programming, as well as electromigration failures of silicide improved by providing a temperature gradient

机译:通过提供温度梯度来改善保险丝结构编程以及硅化物的电迁移故障

摘要

The present invention provides a system, apparatus and method of programming via electromigration. A semiconductor fuse which includes a cathode and an anode coupled by a fuse link having an electrically conductive component, such as silicide, is coupled to a power supply. A potential is applied across the conductive fuse link via the cathode and anode in which the potential is of a magnitude to initiate electromigration of silicide from a region of the semiconductor fuse reducing the conductivity of the fuse link. The electromigration is enhanced by effectuating a temperature gradient between the fuse link and one of the cathode and anode responsive to the applied potential. Portions of the semiconductor fuse are selectively cooled in a heat tranfer relationship to increase the temperature gradient. In one embodiment, a heat sink is applied to the cathode.
机译:本发明提供了一种通过电迁移进行编程的系统,装置和方法。半导体熔丝与电源耦合,该半导体熔丝包括通过具有诸如硅化物的导电成分的熔丝链耦合的阴极和阳极。经由阴极和阳极跨过导电熔丝链施加电势,其中该电势的量值足以引发硅化物从半导体熔丝的区域的电迁移,从而降低了熔丝链的导电性。通过响应于所施加的电势在熔丝链与阴极和阳极之一之间实现温度梯度来增强电迁移。半导体熔丝的部分以热传递关系被选择性地冷却以增加温度梯度。在一个实施例中,将散热器应用于阴极。

著录项

  • 公开/公告号DE60307793T2

    专利类型

  • 公开/公告日2007-08-23

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE2003607793T

  • 发明设计人

    申请日2003-02-27

  • 分类号H01L23/525;

  • 国家 DE

  • 入库时间 2022-08-21 20:27:43

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号