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process for the production of halbleitervorrichtungen with mesastrukturen and multiple passivierungsschichten and related devices
process for the production of halbleitervorrichtungen with mesastrukturen and multiple passivierungsschichten and related devices
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机译:蛋氨酸和多种钝化钨的化学生产halbleitervorrichtungen的方法及相关装置
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摘要
A method of forming a semiconductor device may include forming a semiconductor structure (14) on a substrate (12) wherein the semiconductor structure (14) defines a mesa (20) having a mesa surface (20A) opposite the substrate (12) and mesa sidewalls between the mesa surface and the substrate. A first passivation layer (30) can be formed on at least portions of the mesa sidewalls and on the substrate (12) adjacent the mesa sidewalls wherein at least a portion of the mesa surface (20A) is free of the first passivation layer (30) and wherein the first passivation layer (30) comprises a first material. A second passivation layer (40) can be formed on the first passivation layer (30) wherein at least a portion of the mesa surface (20A) is free of the second passivation layer (40), and wherein the second passivation layer (40) comprises a second material different than the first material. Related devices are also discussed.
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