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The organic composition of the antireflection coating, the formation of patterns of photoresist with the aid of this composition, and a semi - conductor manufactured according to this

机译:减反射涂层的有机组成,借助该组成形成光致抗蚀剂的图案以及根据此方法制造的半导体

摘要

An antireflective organic coating composition comprises a crosslinking agent, a light absorbing agent, a thermally activated acid generator, an organic solvent and a polydimethylsiloxane polymer. Independent claims are also included for: (1) a method of forming a photoresist by applying the claimed composition onto the surface of a layer intended to be attacked, heat treating the resulting material to generate crosslinks and form an anti-reflective organic film, applying a coating of photoresist onto the anti-reflective film, exposing to a source of light and developing; and (2) a semiconductor device fabricated using the claimed method.
机译:抗反射有机涂料组合物包含交联剂,光吸收剂,热活化酸产生剂,有机溶剂和聚二甲基硅氧烷聚合物。还包括以下方面的独立权利要求:(1)一种形成光致抗蚀剂的方法,该方法是将要求保护的组合物涂覆到要腐蚀的层的表面上,对所得材料进行热处理以产生交联键并形成抗反射有机膜,在抗反射膜上的光刻胶涂层,暴露于光源并显影; (2)使用要求保护的方法制造的半导体器件。

著录项

  • 公开/公告号FR2842533B1

    专利类型

  • 公开/公告日2006-11-24

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC;

    申请/专利号FR20030007735

  • 发明设计人 JAE CHANG JUNG;KI SOO SHIN;

    申请日2003-06-26

  • 分类号C09D183/04;C09D5/32;C09D7/12;G03F7/20;H01L21/312;C09D129/02;C09D129/10;

  • 国家 FR

  • 入库时间 2022-08-21 20:27:13

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