首页> 外国专利> Mechanochemical polishing composition useful to polish layers applied on semiconductor microcomponent substrates, comprises alkylxanthate, abrasive particles, metal oxidizing agent, chemical agent to attack metals, pH regulator and solvent

Mechanochemical polishing composition useful to polish layers applied on semiconductor microcomponent substrates, comprises alkylxanthate, abrasive particles, metal oxidizing agent, chemical agent to attack metals, pH regulator and solvent

机译:机械化学抛光组合物,用于抛光施加在半导体微元件基板上的层,包括烷基黄药酸酯,磨料颗粒,金属氧化剂,侵蚀金属的化学试剂,pH调节剂和溶剂

摘要

Mechanochemical polishing composition comprises alkylxanthate, abrasive particles made up of metallic oxide, metal oxidizing agent, a chemical agent for attacking metals, optionally, a corrosion inhibitor, a pH regulation agent and a solvent. Independent claims are included for: (1) the preparation of the mechanochemical polishing composition solubilization of the metal oxidizing agent, the chemical agent of attacking metals, the alkylxanthate and the corrosion inhibitor, in a solvent, addition of the obtained solution in a suspension of a metallic oxide e.g. concentrated to 20 wt.% in weight, for two hours, under strong agitation and addition of the pH regulation agent with the obtained mixture to adjust the pH of the solution between 2-10, and preferably 3-7; (2) a mechanochemical polishing composition obtained by the process; and (3) the use of the polishing composition for mechanochemical polishing of layers applied on a substrate carrying at least a semiconductor microcomponent.
机译:机械化学抛光组合物包括烷基黄药酸酯,由金属氧化物制成的磨料颗粒,金属氧化剂,用于侵蚀金属的化学试剂,任选地腐蚀抑制剂,pH调节剂和溶剂。包括以下独立权利要求:(1)机械溶剂抛光组合物的制备,其将金属氧化剂,侵蚀性金属的化学试剂,烷基黄药和腐蚀抑制剂溶解在溶剂中,将所得溶液添加到金属氧化物在强烈搅拌下浓缩2小时至20重量%,并向所得混合物中加入pH调节剂以将溶液的pH调节至2-10,优选3-7。 (2)通过该方法获得的机械化学抛光组合物; (3)该抛光组合物用于机械化学抛光施加在至少带有半导体微组分的基材上的层的用途。

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