Cavity and membrane forming method for e.g. microfluidic application, involves etching insulating layer from semiconductor superficial layer to form cavity and membrane in superficial layer of silicon on insulator wafer

摘要

The method involves selecting a silicon on insulator (SOI) wafer (2) e.g. epitoxial SOI wafer, comprising a semiconductor superficial layer (4) on an insulating layer (6), where the insulating layer forms a barrier layer. The insulating layer is etched from the semiconductor superficial layer to form cavity and membrane in the semiconductor superficial layer of the silicon on insulator wafer. Independent claims are also included for the following: (1) a method for forming a closed or semi-closed volume (2) a method for forming a microvalve.