Method of producing pitch fractionizations in semiconductor technology

摘要

First spacers 5 are formed on sidewalls of a strip-like mask pattern 2. The mask pattern is removed, and second spacers 7 are formed on the first spacers. Gaps between the spacers are filled with a complementary layer 8. The upper surface is planarized to a lower surface level, leaving a periodic succession of the first spacers, the second spacers and the residual parts of the complementary layer. The lateral dimensions are adapted in such a manner that a removal of one or two of the remaining layers renders a periodic pattern of smaller pitch. The method allows the fabrication of arrays of conductive lines to be formed having a width below that obtainable with a mask defined only by photolithographic methods.